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PD - 93803 PROVISIONAL
IRF1205
HEXFET(R) Power MOSFET
D
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175 C Operating Temprature Fast Switching Fully Avalanche Rated
VDSS = 55V
G S
RDS(on) = 0.027 ID = 41A
Description
Fifth Generation MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universely preferred for all commercial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C I DM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
41 29 164 83 0.56 20 190 25 8.3 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
1.8 --- 62
Units
C/W
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11/3/99
IRF1205
V(BR)DSS
PROVISIONAL
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- 2.0 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.05 --- --- --- --- --- --- --- --- --- --- 9.9 44 34 35 4.5 7.5 1200 390 140 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.027 VGS = 10V, ID = 25A 4.0 V V DS = V GS, ID = 250A --- S VDS = 25V, ID = 25A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 50 ID = 25A 10 nC VDS = 44V 21 VGS = 10V --- VDD = 28V --- ID = 25A ns --- RG = 9.1 --- RD = 1.1 Between lead, --- 6mm (0.25in.) G nH from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 41 showing the A G integral reverse --- --- 164 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS =25A, VGS = 0V --- 63 94 ns TJ = 25C, IF = 25A 140 210 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. VDD=25V, Starting TJ = 25C, L = 610H RG = 25, IAS = 25A
Pulse width 300s; duty cycle 2% Calculated continuous current based on maximum allowable junction
temperature: Package limitation current = 20A
ISD 25A, di/dt 220A/s, VDD V(BR)DSS,
TJ 175C
Use IRFR/U1205 Data and Test conditons.
2
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PROVISIONAL
IRF1205
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .87 (.1 13) 2 .62 (.1 03) 10.54 (.4 15) 10.29 (.4 05) 3 .78 (.149) 3 .54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.05 2) 1.22 (.04 8)
4 1 5.24 (.600) 1 4.84 (.584)
1.15 (.045) MIN 1 2 3
LE AD AS SIG NM ENT S 1 - G ATE 2 - D RA IN 3 - S OU RC E 4 - D RA IN
1 4.09 (.555) 1 3.47 (.530)
4 .06 (.160) 3 .55 (.140)
3X 3X 1.40 (.055 ) 1.15 (.045 )
0 .93 (.0 37) 0 .69 (.0 27) M BAM
3X
0.55 (.0 22) 0.46 (.0 18)
0.36 (.01 4)
2 .54 (.100) 2X N O TES : 1 DIM EN SIO NING & TO LER A NC ING PE R A NSI Y14.5M, 1982. 2 CO N TRO LLING D IM EN S IO N : IN CH
2.92 (.115 ) 2.64 (.104 )
3 O UTLINE C ON F OR MS TO JE DEC OUT LINE TO -22 0AB . 4 H EA TS IN K & LE AD M EA SUR E ME NTS D O NO T INC LU DE BU RR S .
TO-220AB Part Marking Information
E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M
A
IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE
PART NU MBER IR F 10 1 0 9246 9B 1M
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 11/99
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